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SiC的激光表面微造型工艺研究
英文标题:Study on laser surface texturing process of SiC
作者:刘萍萍 魏龙 谢海银 
单位:南京化工职业技术学院流体密封与测控技术研究所 江苏省流体密封与测控工程技术研究开发中心 南京化工职业技术学院机械技术系 
关键词:TG135.5 TG665 
分类号:碳化硅;激光表面微造型;端面螺旋槽
出版年,卷(期):页码:2013,38(4):45-49
摘要:

采用灯泵浦YAG-T50系列激光打标机对SiC进行了端面螺旋槽激光微造型加工实验。采用PS50型非接触式三维表面形貌仪测量了槽深和槽内表面粗糙度。通过实验,研究了有效矢量步长、有效矢量步间延时、Q频率、激光电流等工艺参数对微造型加工质量的影响。实验结果表明,当有效矢量步间延时增大或激光电流增大时,螺旋槽深度随之增大;当有效矢量步长增大或Q频率增大时,螺旋槽深度不断减小;而表面粗糙度值则随着有效矢量步间延时、Q频率和激光电流的增大而减小,随着有效矢量步长的增大而增大。从而得出碳化硅的最佳微造型工艺参数为:有效矢量步长0.001mm、有效矢量步间延时60 μs、Q频率20 kHz、激光电流17 A。

 

The texturing process experiment of SiC surface was done using lamp-pumped YAG-T50 laser marking machine and the depth of groove and the surface roughness were measured using PS50 measurement device which was of non-contact mode. Through experiment, process parameters, such as effective vector step, effective vector step delay, Q frequency, laser current, effecting on the quality of the micro-shape processing were researched. The experimental results show that when effective vector step delay or laser current increases, the depth of the helical groove increases;while effective vector step or the Q frequency increases, the depth decreases; the surface roughness value decreases along with increasing effective vector step delay, Q frequency and laser current increase when the effective vector step increases. For silicon carbide, the best process parameters are that the effective vector step is 0.001mm, effective vector step delay is 60 μs,Q frequency is 20 kHz and laser current is 17 A.

基金项目:
江苏省“六大人才高峰”资助项目(09-D-018,2012-JNHB-017);江苏省高校科研成果产业化推进项目(JHZD2012-14)
作者简介:
刘萍萍(1979-),女,硕士,副教授
参考文献:


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